Search results for "power devices"

showing 3 items of 3 documents

An energy analysis of IEEE 802.15.6 scheduled access modes

2010

Body Area Networks (BANs) are an emerging area of wireless personal communications. The IEEE 802.15.6 working group aims to develop a communications standard optimised for low power devices operating on, in or around the human body. IEEE 802.15.6 specifically targets low power medical application areas. The IEEE 802.15.6 draft defines two main channel access modes; contention based and contention free. This paper examines the energy lifetime performance of contention free access and in particular of periodic scheduled allocations. This paper presents an overview of the IEEE 802.15.6 and an analytical model for estimating the device lifetime. The analysis determines the maximum device lifeti…

Settore ING-INF/03 - TelecomunicazioniComputer scienceInter-Access Point Protocolbusiness.industryPhysical layerbiomedical communication body area networks personal area networksIEEE 802.15.6 scheduled access modes body area network channel access modes communications standard device lifetime estimation energy analysis energy lifetime performance human body low power devices low power medical application areas periodic scheduled allocation wireless personal communicationTelecommunications linkBody area networkWirelessIEEE 802.11e-2005TransceiverbusinessIEEE 802.15IEEE 802.11r-2008Computer network2010 IEEE Globecom Workshops
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Failure Estimates for SiC Power MOSFETs in Space Electronics

2018

Silicon carbide (SiC) power metal-oxide-semiconductor field effect transistors (MOSFETs) are space-ready in terms of typical reliability measures. However, single event burnout (SEB) due to heavy-ion irradiation often occurs at voltages 50% or lower than specified breakdown. Failure rates in space are estimated for burnout of 1200 V devices based on the experimental data for burnout and the expected heavy-ion linear energy transfer (LET) spectrum in space. peerReviewed

Materials sciencesingle-event burnoutlcsh:Motor vehicles. Aeronautics. AstronauticsAerospace EngineeringBurnoutpower MOSFETs01 natural scienceschemistry.chemical_compoundReliability (semiconductor)silicon carbide0103 physical sciencesSilicon carbidePower semiconductor devicePower MOSFETheavy ionsavaruustekniikka010302 applied physicspower devicesreliabilityta114ta213010308 nuclear & particles physicsfailure ratessingle event effectsEngineering physicsPower (physics)säteilyfysiikkachemistrytransistoritField-effect transistorlcsh:TL1-4050VoltageAerospace
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Single-Event Burnout Mechanisms in SiC Power MOSFETs

2018

Heavy ion-induced single-event burnout (SEB) is investigated in high-voltage silicon carbide power MOSFETs. Experimental data for 1200-V SiC power MOSFETs show a significant decrease in SEB onset voltage for particle linear energy transfers greater than 10 MeV/cm 2 /mg, above which the SEB threshold voltage is nearly constant at half of the rated maximum operating voltage for these devices. TCAD simulations show a parasitic bipolar junction transistor turn-on mechanism, which drives the avalanching of carriers and leads to runaway drain current, resulting in SEB. peerReviewed

Nuclear and High Energy PhysicsMaterials sciencesingle-event burnoutpower MOSFETs01 natural sciencesdevice simulationselektroniikkakomponentitchemistry.chemical_compoundsilicon carbide0103 physical sciencesMOSFETSilicon carbideElectrical and Electronic EngineeringPower MOSFETheavy ions010302 applied physicspower devicesta114ta213010308 nuclear & particles physicsbusiness.industryionisoiva säteilyBipolar junction transistorsingle event effectsThreshold voltageImpact ionizationsäteilyfysiikkaNuclear Energy and EngineeringchemistrytransistoritOptoelectronicsbusinessCurrent densityVoltageIEEE Transactions on Nuclear Science
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